NTHL1000N170M1
Part NoNTHL1000N170M1
Manufactureronsemi
DescriptionSILICON CARBIDE (SIC) MOSFET EL
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C4.2A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)1.43Ohm @ 2A, 20V
RdsOn(Max)@Id4.3V @ 640µA
Vgs14 nC @ 20 V
Vgs(th)(Max)@Id+25V, -15V
Vgs(Max)150 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature48W
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3057
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.928 | |
| 10 | 5.8094 | |
| 100 | 5.6316 | |
| 1000 | 5.4538 | |
| 10000 | 5.2166 |
Associated Product
