NTMS4101PR2
Part NoNTMS4101PR2
Manufactureronsemi
DescriptionMOSFET P-CH 20V 6.9A 8SOIC
Datasheet
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Specification
PackageTape & Reel (TR)
Series-
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C6.9A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)19mOhm @ 6.9A, 4.5V
RdsOn(Max)@Id450mV @ 250µA (Min)
Vgs32 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)3200 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.38W (Tj)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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3778
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