NVB190N65S3
Part NoNVB190N65S3
Manufactureronsemi
DescriptionMOSFET N-CH 650V 20A D2PAK-3
Datasheet
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Specification
PackageTape & Reel (TR)
SeriesSuperFET® III
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 10A, 10V
RdsOn(Max)@Id5V @ 430µA
Vgs34 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1605 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature162W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
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2782
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