NVH4L015N065SC1
Part NoNVH4L015N065SC1
Manufactureronsemi
DescriptionSIC MOS TO247-4L 650V
Datasheet
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ECAD Module
Specification
PackageTray
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C142A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)18mOhm @ 75A, 18V
RdsOn(Max)@Id4.3V @ 25mA
Vgs283 nC @ 18 V
Vgs(th)(Max)@Id4790 pF @ 325 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds500W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Automotive
OperatingTemperatureAEC-Q101
MountingTypeThrough Hole
SupplierDevicePackageTO-247-4L
Package/CaseTO-247-4
GateCharge(Qg)(Max)@Vgs+22V, -8V
Grade
Qualification
In Stock:
5341
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 74.82 | |
| 10 | 73.3236 | |
| 100 | 71.079 | |
| 1000 | 68.8344 | |
| 10000 | 65.8416 |
Associated Product
