NVH4L022N120M3S
Part NoNVH4L022N120M3S
Manufactureronsemi
DescriptionSIC MOS TO247-4L 22MOHM 1200V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C68A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)30mOhm @ 40A, 18V
RdsOn(Max)@Id4.4V @ 20mA
Vgs151 nC @ 18 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)3175 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature352W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureAutomotive
MountingTypeAEC-Q101
SupplierDevicePackageThrough Hole
Package/CaseTO-247-4L
GateCharge(Qg)(Max)@VgsTO-247-4
Grade
Qualification
In Stock:
7573
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 43.5074 | |
| 10 | 42.6373 | |
| 100 | 41.332 | |
| 1000 | 40.0268 | |
| 10000 | 38.2865 |
Associated Product
