NVH4L040N120M3S
Part NoNVH4L040N120M3S
Manufactureronsemi
DescriptionSIC MOS TO247-4L 40MOHM 1200V M3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C54A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)54mOhm @ 20A, 18V
RdsOn(Max)@Id4.4V @ 10mA
Vgs75 nC @ 18 V
Vgs(th)(Max)@Id1700 pF @ 800 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds231W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Automotive
OperatingTemperatureAEC-Q101
MountingTypeThrough Hole
SupplierDevicePackageTO-247-4L
Package/CaseTO-247-4
GateCharge(Qg)(Max)@Vgs+18V, -3V
Grade
Qualification
In Stock:
3347
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 30.2956 | |
| 10 | 29.6897 | |
| 100 | 28.7808 | |
| 1000 | 27.872 | |
| 10000 | 26.6601 |
Associated Product
