NVH4L070N120M3S
Part NoNVH4L070N120M3S
Manufactureronsemi
DescriptionSILICON CARBIDE (SIC) MOSFET-ELI
Datasheet
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ECAD Module
Specification
PackageTube
SeriesAutomotive, AEC-Q101
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C34A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)87mOhm @ 15A, 18V
RdsOn(Max)@Id4.4V @ 7mA
Vgs57 nC @ 18 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)1230 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature160W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4L
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3002
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 20.0962 | |
| 10 | 19.6943 | |
| 100 | 19.0914 | |
| 1000 | 18.4885 | |
| 10000 | 17.6847 |
Associated Product
