NVH4L160N120SC1
Part NoNVH4L160N120SC1
Manufactureronsemi
DescriptionSICFET N-CH 1200V 17.3A TO247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C17.3A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)224mOhm @ 12A, 20V
RdsOn(Max)@Id4.3V @ 2.5mA
Vgs34 nC @ 20 V
Vgs(th)(Max)@Id665 pF @ 800 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds111W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Automotive
OperatingTemperatureAEC-Q101
MountingTypeThrough Hole
SupplierDevicePackageTO-247-4L
Package/CaseTO-247-4
GateCharge(Qg)(Max)@Vgs+25V, -15V
Grade
Qualification
In Stock:
6432
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 18.8734 | |
| 10 | 18.4959 | |
| 100 | 17.9297 | |
| 1000 | 17.3635 | |
| 10000 | 16.6086 |
Associated Product
