NVHL1000N170M1
Part NoNVHL1000N170M1
Manufactureronsemi
DescriptionSIC 1700V MOS 1O IN TO247-3L
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1700 V
Current - Continuous Drain (Id) @ 25°C4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs1.43Ohm @ 2A, 20V
Vgs(th) (Max) @ Id4.3V @ 640µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 20 V
Vgs (Max)+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 1000 V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
In Stock:
444
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.33 | |
| 10 | 6.203 | |
| 100 | 6.01 | |
| 1000 | 5.82 | |
| 10000 | 5.57 |
Associated Product
