NXH004P120M3F2PNG
Part NoNXH004P120M3F2PNG
Manufactureronsemi
Description1200V 4MOHM M3S SIC HALFBRIDGE
Datasheet
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ECAD Module
Specification
PackageTray
Series-
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C338A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 200A, 18V
Vgs(th) (Max) @ Id4.4V @ 120mA
Gate Charge (Qg) (Max) @ Vgs876nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds16410pF @ 800V
Power - Max1.098W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package36-PIM (56.7x62.8)
Grade-
Qualification-
In Stock:
20
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 220.72 | |
| 10 | 216.306 | |
| 100 | 209.68 | |
| 1000 | 203.06 | |
| 10000 | 194.23 |
Associated Product
