NXH006P120M3F2PTHG
Part NoNXH006P120M3F2PTHG
Manufactureronsemi
Description1200V 6MOHM M3S SIC HALFBRIDGE
Datasheet
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ECAD Module
Specification
PackageTray
Series-
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C191A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 100A, 18V
Vgs(th) (Max) @ Id4.4V @ 80mA
Gate Charge (Qg) (Max) @ Vgs622nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds11914pF @ 800V
Power - Max556W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Grade-
Qualification-
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package36-PIM (56.7x62.8)
In Stock:
2332
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 149.69 | |
| 10 | 146.696 | |
| 100 | 142.21 | |
| 1000 | 137.71 | |
| 10000 | 131.73 |
Associated Product
