NXH007F120M3F2PTHG
Part NoNXH007F120M3F2PTHG
Manufactureronsemi
Description7M 1200V 40A M3S SIC FULL BRIDGE
Datasheet
Download Now!
ECAD Module
Specification
PackageTray
Series-
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration4 N-Channel (Full Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C149A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 120A, 18V
Vgs(th) (Max) @ Id4.4V @ 60mA
Gate Charge (Qg) (Max) @ Vgs407nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds9090pF @ 800V
Power - Max353W (Tj)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package34-PIM (56.7x42.5)
Grade-
Qualification-
In Stock:
20
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 160.29 | |
| 10 | 157.084 | |
| 100 | 152.28 | |
| 1000 | 147.47 | |
| 10000 | 141.06 |
Associated Product
