NXH008T120M3F2PTHG
RoHS

NXH008T120M3F2PTHG

Part NoNXH008T120M3F2PTHG
Manufactureronsemi
Description8M 1200V 40A M3S SIC TNPC MODULE
Datasheet Download Now!
ECAD Module NXH008T120M3F2PTHG
Get Quotation Now!
Specification
PackageTray
Series-
ProductStatusActive
TechnologySilicon Carbide (SiC)
Configuration4 N-Channel
FETFeatureSilicon Carbide (SiC)
DraintoSourceVoltage(Vdss)1200V
Current-ContinuousDrain(Id)@25°C-
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id454nC @ 20V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds-
Power-Max-40°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
Package/CaseChassis Mount
SupplierDevicePackageModule
Grade-
Qualification
In Stock: 17054
Pricing
QTY UNIT PRICE EXT PRICE
1 171.1296
10 167.707
100 162.5731
1000 157.4392
10000 150.594
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
STU5N62K3
STU5N62K3
STMicroelectronics
MOSFET N-CH 620V 4.2A IPAK
IRFR3708TRL
IRFR3708TRL
Infineon
MOSFET N-CH 30V 61A DPAK
SPB80P06PGATMA1
SPB80P06PGATMA1
INFINEON
MOSFET P-CH 60V 80A TO263-3
IXFB170N30P
IXFB170N30P
IXYS
MOSFET N-CH 300V 170A PLUS264
MTP50P03HDL
MTP50P03HDL
onsemi
MOSFET P-CH 30V 50A TO220AB
RV7L020GNTCR1
RV7L020GNTCR1
Rohm Semiconductor
NCH 60V 2A MIDDLE POWER MOSFET :