NXH010P120MNF1PTG
Part NoNXH010P120MNF1PTG
Manufactureronsemi
DescriptionSIC 2N-CH 1200V 114A
Datasheet
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ECAD Module
Specification
PackageTray
Series-
ProductStatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Dual) Common Source
FETFeature-
DraintoSourceVoltage(Vdss)1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C114A (Tc)
RdsOn(Max)@Id14mOhm @ 100A, 20V
Vgs4.3V @ 40mA
Vgs(th)(Max)@Id454nC @ 20V
GateCharge(Qg)(Max)@Vgs4707pF @ 800V
InputCapacitance(Ciss)(Max)@Vds250W (Tj)
Power-Max-40°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
Package/CaseChassis Mount
SupplierDevicePackageModule
Grade-
Qualification
In Stock:
3732
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 145.7919 | |
| 10 | 142.8761 | |
| 100 | 138.5023 | |
| 1000 | 134.1285 | |
| 10000 | 128.2969 |
Associated Product
