NXV10V160ST1
Part NoNXV10V160ST1
Manufactureronsemi
Description3-PHASE AUTOMOTIVE POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration6 N-Channel
FET Feature-
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs101nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds6970pF @ 50V
Power - Max-
Mounting TypeThrough Hole
Package / Case21-PowerDIP Module (1.370", 34.80mm)
Supplier Device PackageAPM21-CGA
Operating Temperature175°C (TJ)
Grade-
Qualification-
In Stock:
2274
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 42.679 | |
| 10 | 41.825 | |
| 100 | 40.54 | |
| 1000 | 39.26 | |
| 10000 | 37.56 |
Associated Product
