FDD5612
Part NoFDD5612
Manufactureronsemi
DescriptionMOSFET N-CH 60V 5.4A TO252-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-252-3
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs55 mOhm @ 5.4A, 10V
Power Dissipation (Max)3.8W (Ta), 42W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesFDD5612-ND
FDD5612TR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time11 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds660pF @ 30V
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Drain to Source Voltage (Vdss)60V
Detailed DescriptionN-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3
Current - Continuous Drain (Id) @ 25°C5.4A (Ta)
In Stock:
20256
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