FQPF4N80
Part NoFQPF4N80
Manufactureronsemi
DescriptionMOSFET N-CH 800V 2.2A TO220F
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220F
SeriesQFET®
Rds On (Max) @ Id, Vgs3.6 Ohm @ 1.1A, 10V
Power Dissipation (Max)43W (Tc)
PackagingTube
Package / CaseTO-220-3 Full Pack
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds880pF @ 25V
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)800V
Detailed DescriptionN-Channel 800V 2.2A (Tc) 43W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
In Stock:
17284
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.972 | |
| 10 | 0.9526 | |
| 100 | 0.9234 | |
| 1000 | 0.8942 | |
| 10000 | 0.8554 |
Associated Product
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