HUF75639G3
Part NoHUF75639G3
Manufactureronsemi
DescriptionMOSFET N-CH 100V 56A TO247-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-247
SeriesUltraFET™
Rds On (Max) @ Id, Vgs25 mOhm @ 56A, 10V
Power Dissipation (Max)200W (Tc)
PackagingTube
Package / CaseTO-247-3
Other NamesHUF75639G3-ND
HUF75639G3FS
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs130nC @ 20V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 56A (Tc) 200W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25°C56A (Tc)
In Stock:
16760
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.528 | |
| 10 | 3.4574 | |
| 100 | 3.3516 | |
| 1000 | 3.2458 | |
| 10000 | 3.1046 |
Associated Product
