AS2M040120P
Part NoAS2M040120P
ManufacturerAnBon
DescriptionN-CHANNEL SILICON CARBIDE POWER
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)55mOhm @ 40A, 20V
RdsOn(Max)@Id4V @ 10mA
Vgs142 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)2946 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature330W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
12600
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 19.6555 | |
| 10 | 19.2624 | |
| 100 | 18.6727 | |
| 1000 | 18.0831 | |
| 10000 | 17.2968 |
Associated Product
