AONV070V65G1
RoHS

AONV070V65G1

Part NoAONV070V65G1
DescriptionGAN
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ECAD Module AONV070V65G1
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C16A
DriveVoltage(MaxRdsOn6V
MinRdsOn)90mOhm @ 6A, 6V
RdsOn(Max)@Id2.3V @ 5mA
Vgs6.9 nC @ 6 V
Vgs(th)(Max)@Id6V
Vgs(Max)203 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W
PowerDissipation(Max)-55°C ~ 150°C
OperatingTemperatureSurface Mount
MountingType8-DFN (8x8)
SupplierDevicePackage8-PowerTDFN
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 3817
Pricing
QTY UNIT PRICE EXT PRICE
1 8.0136
10 7.8533
100 7.6129
1000 7.3725
10000 7.052
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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