SI1032X-T1-E3
Part NoSI1032X-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 20V 200MA SC89-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id1.2V @ 250µA
Vgs (Max)±6V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageSC-89-3
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs5 Ohm @ 200mA, 4.5V
Power Dissipation (Max)300mW (Ta)
PackagingTape & Reel (TR)
Package / CaseSC-89, SOT-490
Other NamesSI1032X-T1-E3TR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Drain to Source Voltage (Vdss)20V
Detailed DescriptionN-Channel 20V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
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