SI3493DV-T1-E3

Part NoSI3493DV-T1-E3

ManufacturerVishay

DescriptionMOSFET P-CH 20V 5.3A 6-TSOP

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ECAD Module

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Specification

Vgs(th) (Max) @ Id1V @ 250µA

Vgs (Max)±8V

TechnologyMOSFET (Metal Oxide)

Supplier Device Package6-TSOP

SeriesTrenchFET®

Rds On (Max) @ Id, Vgs27 mOhm @ 7A, 4.5V

Power Dissipation (Max)1.1W (Ta)

PackagingTape & Reel (TR)

Package / CaseSOT-23-6 Thin, TSOT-23-6

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs32nC @ 4.5V

FET TypeP-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V

Drain to Source Voltage (Vdss)20V

Detailed DescriptionP-Channel 20V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP

Current - Continuous Drain (Id) @ 25°C5.3A (Ta)

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