SI3493DV-T1-E3
RoHS

SI3493DV-T1-E3

Part NoSI3493DV-T1-E3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 5.3A 6-TSOP
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ECAD Module SI3493DV-T1-E3
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Specification
Vgs(th) (Max) @ Id1V @ 250µA
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package6-TSOP
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs27 mOhm @ 7A, 4.5V
Power Dissipation (Max)1.1W (Ta)
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs32nC @ 4.5V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Drain to Source Voltage (Vdss)20V
Detailed DescriptionP-Channel 20V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
In Stock: 17513
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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