SI5473DC-T1-GE3
Part NoSI5473DC-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 12V 5.9A 1206-8
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id1V @ 250µA
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package1206-8 ChipFET™
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs27 mOhm @ 5.9A, 4.5V
Power Dissipation (Max)1.3W (Ta)
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs32nC @ 4.5V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Drain to Source Voltage (Vdss)12V
Detailed DescriptionP-Channel 12V 5.9A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C5.9A (Ta)
In Stock:
6949
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 10.0 | |
| 10 | 9.8 | |
| 100 | 9.5 | |
| 1000 | 9.2 | |
| 10000 | 8.8 |
Associated Product
