SQ2319CES-T1_GE3
RoHS

SQ2319CES-T1_GE3

Part NoSQ2319CES-T1_GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 40V 4.6A SOT23-3
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ECAD Module SQ2319CES-T1_GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 20 V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
In Stock: 2559
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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