DMG3N60SJ3
Part NoDMG3N60SJ3
ManufacturerDiodes Inc.
DescriptionMOSFET BVDSS: 501V 650V TO251
Datasheet
Download Now!
ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-251
SeriesAutomotive, AEC-Q101
Rds On (Max) @ Id, Vgs3.5 Ohm @ 1.5A, 10V
Power Dissipation (Max)41W (Tc)
PackagingTube
Package / CaseTO-251-3, IPak, Short Leads
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Manufacturer Standard Lead Time22 Weeks
Lead Free Status / RoHS StatusContains lead / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds354pF @ 25V
Gate Charge (Qg) (Max) @ Vgs12.6nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)650V
Detailed DescriptionN-Channel 650V 2.8A (Tc) 41W (Tc) Through Hole TO-251
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
In Stock:
7645
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
