STU6N60M2
Part NoSTU6N60M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 4.5A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ II Plus
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C4.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.2Ohm @ 2.25A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs13.5 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)232 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature60W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251 (IPAK)
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
19976
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.463 | |
| 10 | 1.4337 | |
| 100 | 1.3899 | |
| 1000 | 1.346 | |
| 10000 | 1.2874 |
Associated Product
