DMWSH120H28SM4
Part NoDMWSH120H28SM4
ManufacturerDiodes Incorporated
DescriptionSIC MOSFET BVDSS: >1000V TO247-4
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs28.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id3.6V @ 17.7mA
Gate Charge (Qg) (Max) @ Vgs173.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds3944 pF @ 1000 V
FET Feature-
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
Drive Voltage (Max Rds On, Min Rds On)15V
Vgs (Max)+19V, -8V
Power Dissipation (Max)429W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Grade-
Qualification-
In Stock:
2232
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 23.935 | |
| 10 | 23.456 | |
| 100 | 22.74 | |
| 1000 | 22.02 | |
| 10000 | 21.06 |
Associated Product
