Specification
PackageBulk
Series-
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C27A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs9.3mOhm @ 15A, 10V, 30.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1122pF @ 15V, 1150pF @ 20V
Power - Max10.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device Package8-QFN (3x3)
Grade-
Qualification-
In Stock:
2147
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.202 | |
10 | 0.197 | |
100 | 0.19 | |
1000 | 0.19 | |
10000 | 0.18 |