Specification
PackageBulk
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)65 V
Current - Continuous Drain (Id) @ 25°C114A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4130 pF @ 30 V
FET Feature-
Power Dissipation (Max)63.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-QFN (5x6)
Package / Case8-PowerTDFN
Grade-
Qualification-
In Stock:
2117
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.949 | |
10 | 0.93 | |
100 | 0.9 | |
1000 | 0.87 | |
10000 | 0.83 |