FBG10N30BSH
Part NoFBG10N30BSH
ManufacturerEPC Space, LLC
DescriptionGAN FET HEMT 100V 30A 4FSMD-B
Datasheet
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ECAD Module
Specification
PackageBulk
SerieseGaN®
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C30A (Tc)
DriveVoltage(MaxRdsOn5V
MinRdsOn)12mOhm @ 30A, 5V
RdsOn(Max)@Id2.5V @ 5mA
Vgs11 nC @ 5 V
Vgs(th)(Max)@Id1000 pF @ 50 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeSurface Mount
SupplierDevicePackage4-SMD
Package/Case4-SMD, No Lead
GateCharge(Qg)(Max)@Vgs+6V, -4V
Grade
Qualification
In Stock:
16305
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 329.91 | |
| 10 | 323.3118 | |
| 100 | 313.4145 | |
| 1000 | 303.5172 | |
| 10000 | 290.3208 |
Associated Product
