FDC855N
Part NoFDC855N
ManufacturerFairchild Semiconductor
DescriptionSMALL SIGNAL FIELD-EFFECT TRANSI
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesPowerTrench®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C6.1A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)27mOhm @ 6.1A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs13 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)655 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.6W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSuperSOT™-6
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
23407
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.2304 | |
| 10 | 0.2258 | |
| 100 | 0.2189 | |
| 1000 | 0.212 | |
| 10000 | 0.2028 |
Associated Product
