FQI5N60CTU
Part NoFQI5N60CTU
Manufactureronsemi
DescriptionMOSFET N-CH 600V 4.5A I2PAK
Datasheet
Download Now!
ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C4.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id±30V
Vgs-
Vgs(th)(Max)@Id3.13W (Ta), 100W (Tc)
Vgs(Max)-55°C ~ 150°C (TJ)
InputCapacitance(Ciss)(Max)@VdsThrough Hole
FETFeatureTO-262 (I2PAK)
PowerDissipation(Max)TO-262-3 Long Leads, I2PAK, TO-262AA
OperatingTemperature2.5Ohm @ 2.25A, 10V
MountingType19 nC @ 10 V
SupplierDevicePackage670 pF @ 25 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10015
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9202 | |
| 10 | 0.9018 | |
| 100 | 0.8742 | |
| 1000 | 0.8466 | |
| 10000 | 0.8098 |
Associated Product
