NVMFS5832NLWFT1G-UM
RoHS

NVMFS5832NLWFT1G-UM

Part NoNVMFS5832NLWFT1G-UM
Manufactureronsemi
DescriptionMOSFET N-CH 40V 21A 5DFN
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ECAD Module NVMFS5832NLWFT1G-UM
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Specification
PackageTape & Reel (TR)
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C21A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.7W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeSurface Mount, Wettable Flank
Supplier Device Package5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case8-PowerTDFN, 5 Leads
In Stock: 2088
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product