FQPF19N20
Part NoFQPF19N20
Manufactureronsemi
DescriptionMOSFET N-CH 200V 11.8A TO220F
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C11.8A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)150mOhm @ 5.9A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs40 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1600 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220F-3
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17733
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9072 | |
| 10 | 0.8891 | |
| 100 | 0.8618 | |
| 1000 | 0.8346 | |
| 10000 | 0.7983 |
Associated Product
