HUF76113T3ST
Part NoHUF76113T3ST
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C4.7A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)31mOhm @ 4.7A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs20.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)625 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-223-4
SupplierDevicePackageTO-261-4, TO-261AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13308
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.572 | |
| 10 | 0.5606 | |
| 100 | 0.5434 | |
| 1000 | 0.5262 | |
| 10000 | 0.5034 |
Associated Product
