IRFM210BTF
Part NoIRFM210BTF
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C770mA (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 390mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs±30V
Vgs(th)(Max)@Id225 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureSOT-223-4
MountingTypeTO-261-4, TO-261AA
SupplierDevicePackage9.3 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
12140
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.2581 | |
| 10 | 0.2529 | |
| 100 | 0.2452 | |
| 1000 | 0.2375 | |
| 10000 | 0.2271 |
Associated Product
