2N7636-GA
Part No2N7636-GA
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 650V 4A TO276
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusObsolete
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C4A (Tc) (165°C)
DriveVoltage(MaxRdsOn-
MinRdsOn)415mOhm @ 4A
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)324 pF @ 35 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 225°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-276
SupplierDevicePackageTO-276AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3919
Pricing
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Associated Product
