2N7636-GA

Part No2N7636-GA

ManufacturerGeneSiC Semiconductor

DescriptionTRANS SJT 650V 4A TO276

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Specification

PackageBulk

Series-

ProductStatusObsolete

FETType-

TechnologySiC (Silicon Carbide Junction Transistor)

DraintoSourceVoltage(Vdss)650 V

Current-ContinuousDrain(Id)@25°C4A (Tc) (165°C)

DriveVoltage(MaxRdsOn-

MinRdsOn)415mOhm @ 4A

RdsOn(Max)@Id-

Vgs-

Vgs(th)(Max)@Id-

Vgs(Max)324 pF @ 35 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature125W (Tc)

PowerDissipation(Max)-55°C ~ 225°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeTO-276

SupplierDevicePackageTO-276AA

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 3919
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