G3R160MT12J
Part NoG3R160MT12J
ManufacturerGeneSiC Semiconductor
DescriptionSIC MOSFET N-CH 19A TO263-7
Datasheet
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ECAD Module
Specification
PackageTube
SeriesG3R™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C19A (Tc)
DriveVoltage(MaxRdsOn15V
MinRdsOn)208mOhm @ 10A, 15V
RdsOn(Max)@Id2.7V @ 5mA (Typ)
Vgs23 nC @ 15 V
Vgs(th)(Max)@Id+20V, -10V
Vgs(Max)724 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature128W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263-7
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3461
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.9532 | |
| 10 | 5.8341 | |
| 100 | 5.6555 | |
| 1000 | 5.4769 | |
| 10000 | 5.2388 |
Associated Product
