G3R160MT17D
Part NoG3R160MT17D
ManufacturerGeneSiC Semiconductor
DescriptionSIC MOSFET N-CH 21A TO247-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesG3R™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C21A (Tc)
DriveVoltage(MaxRdsOn15V
MinRdsOn)208mOhm @ 12A, 15V
RdsOn(Max)@Id2.7V @ 5mA
Vgs51 nC @ 15 V
Vgs(th)(Max)@Id±15V
Vgs(Max)1272 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature175W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3061
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.3624 | |
| 10 | 12.1152 | |
| 100 | 11.7443 | |
| 1000 | 11.3734 | |
| 10000 | 10.8789 |
Associated Product
