G3R450MT17D
Part NoG3R450MT17D
ManufacturerGeneSiC Semiconductor
DescriptionSIC MOSFET N-CH 9A TO247-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesG3R™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn15V
MinRdsOn)585mOhm @ 4A, 15V
RdsOn(Max)@Id2.7V @ 2mA
Vgs18 nC @ 15 V
Vgs(th)(Max)@Id±15V
Vgs(Max)454 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature88W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3444
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.6332 | |
| 10 | 6.5005 | |
| 100 | 6.3015 | |
| 1000 | 6.1025 | |
| 10000 | 5.8372 |
Associated Product
