GA05JT12-263
Part NoGA05JT12-263
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 1200V 15A D2PAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C15A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)-
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)106W (Tc)
InputCapacitance(Ciss)(Max)@Vds175°C (TJ)
FETFeatureSurface Mount
PowerDissipation(Max)TO-263-7
OperatingTemperatureTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MountingType-
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3142
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Associated Product
