GA10JT12-263
Part NoGA10JT12-263
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 1200V 25A
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)120mOhm @ 10A
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)170W (Tc)
InputCapacitance(Ciss)(Max)@Vds175°C (TJ)
FETFeatureSurface Mount
PowerDissipation(Max)-
OperatingTemperature-
MountingType-
SupplierDevicePackage1403 pF @ 800 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4710
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Associated Product
