SUG90090E-GE3
Part NoSUG90090E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 100A TO247AC
Datasheet
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ECAD Module
Specification
PackageTube
SeriesThunderFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)9.5mOhm @ 20A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs129 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5220 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature395W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AC
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6019
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.0185 | |
| 10 | 3.9381 | |
| 100 | 3.8176 | |
| 1000 | 3.697 | |
| 10000 | 3.5363 |
Associated Product
