G2K3N10H
RoHS

G2K3N10H

Part NoG2K3N10H
ManufacturerGoford Semiconductor
DescriptionMOSFET N-CH 100V 2A SOT-223
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ECAD Module G2K3N10H
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)220mOhm @ 2A, 10V
RdsOn(Max)@Id2V @ 250µA
Vgs13 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)434 pF @ 50 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature2.4W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-223
SupplierDevicePackageTO-261-4, TO-261AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 14399
Pricing
QTY UNIT PRICE EXT PRICE
1 0.0763
10 0.0748
100 0.0725
1000 0.0702
10000 0.0671
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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