GS65R038Q4
Part NoGS65R038Q4
ManufacturerGoford Semiconductor
DescriptionSiC MOSFET N-CH 650V 60A TO-247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs49mOhm @ 30A, 18V
Vgs(th) (Max) @ Id4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-10V, +20V
Input Capacitance (Ciss) (Max) @ Vds1480 pF @ 1000 V
FET Feature-
Power Dissipation (Max)395W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
Grade-
Qualification-
In Stock:
2464
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Associated Product
