GT023N10T
Part NoGT023N10T
ManufacturerGoford Semiconductor
DescriptionN100V, 140A,RD<2.7M@10V,VTH2.7V~
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C140A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.7mOhm @ 20A, 10V
RdsOn(Max)@Id4.3V @ 250µA
Vgs90 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)8086 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature500W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
25300
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.0926 | |
| 10 | 3.0307 | |
| 100 | 2.938 | |
| 1000 | 2.8452 | |
| 10000 | 2.7215 |
Associated Product
