LSIC1MO120G0120
Part NoLSIC1MO120G0120
ManufacturerLittelfuse Inc.
DescriptionMOSFET SIC 1200V 18A TO247-4L
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C27A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)150mOhm @ 14A, 20V
RdsOn(Max)@Id4V @ 7mA
Vgs+22V, -6V
Vgs(th)(Max)@Id-
Vgs(Max)156W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)TO-247-4L
OperatingTemperatureTO-247-4
MountingType63 nC @ 20 V
SupplierDevicePackage1130 pF @ 800 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3931
available for immediate sale in a store
available for immediate sale in a store
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Associated Product
