IRF331
Part NoIRF331
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)350 V
Current-ContinuousDrain(Id)@25°C5.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1Ohm @ 3A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs35 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)700 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature75W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-3
SupplierDevicePackageTO-204AA, TO-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9904
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.0145 | |
| 10 | 1.9742 | |
| 100 | 1.9138 | |
| 1000 | 1.8533 | |
| 10000 | 1.7728 |
Associated Product
