SCT018H65G3AG
Part NoSCT018H65G3AG
ManufacturerSTMicroelectronics
DescriptionH2PAK-7
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs27mOhm @ 30A, 18V
Vgs(th) (Max) @ Id4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs79.4 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds2124 pF @ 400 V
FET Feature-
Power Dissipation (Max)385W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GradeAutomotive
QualificationAEC-Q101
In Stock:
2254
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 14.126 | |
| 10 | 13.843 | |
| 100 | 13.42 | |
| 1000 | 13.0 | |
| 10000 | 12.43 |
Associated Product
