IRF643
Part NoIRF643
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)150 V
Current-ContinuousDrain(Id)@25°C16A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id±20V
Vgs-
Vgs(th)(Max)@Id125W (Tc)
Vgs(Max)-55°C ~ 150°C (TJ)
InputCapacitance(Ciss)(Max)@VdsThrough Hole
FETFeatureTO-220AB
PowerDissipation(Max)TO-220-3
OperatingTemperature220mOhm @ 10A, 10V
MountingType64 nC @ 10 V
SupplierDevicePackage1275 pF @ 25 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4935
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.87 | |
| 10 | 0.8526 | |
| 100 | 0.8265 | |
| 1000 | 0.8004 | |
| 10000 | 0.7656 |
Associated Product
